PART |
Description |
Maker |
HM64YGB36100BP-33 HM64YGB36100 |
32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)
|
Renesas Electronics Corporation
|
HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
IS61DDB41M36A |
Synchronous pipeline read with late write operation
|
Integrated Silicon Solu...
|
CXK77B1840AGB CXK77B3640AGB |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
|
Sony
|
GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
UPD4443362 UPD4443362GF-A75 |
4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp. NEC[NEC]
|
GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
|
GSI Technology, Inc.
|
CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
|
Sony, Corp.
|
MCM69R738CZP4.4R MCM69R820CZP4.4R MCM69R738CZP4R M |
4M Late Write 2.5 V I/O
|
Motorola, Inc
|
MCM69R736A MCM69R736AZP5 MCM69R736AZP5R MCM69R736A |
4M LATE WRITE HSTL
|
MOTOROLA[Motorola Inc] Motorola, Inc
|
MCM69R618 MCM69R536 |
1M Late Write HSTL From old datasheet system
|
Motorola
|